access icon free Enhanced conductivity of anatase TiO2 nanowires by La and Co co-doping

In this work, the conductivity of anatase titanium dioxide (TiO2) nanowires was enhanced by lanthanum (La) and cobalt (Co) co-doping method. The nanowires were synthesised via a facile solvothermal process. The diameter of as-synthesised nanowires is about 300 nm and length more than 20 μm. The electrical properties were studied based on single nanowire field-effect transistor; the anatase TiO2 nanowires exhibit n-type conductivity with mobility of 2.18 cm2 V−1 S−1 and carrier concentration of 1.95 × 1018 cm−3. Doping of rare earth element La and transition element Co can not only reduce bandgap, but also reduce electron–hole recombination and improve carrier concentration. The distinct electrical properties of doped nanowires will open new opportunities for the application of anatase TiO2 semiconductor materials in nanoelectronics devices.

Inspec keywords: semiconductor doping; electron-hole recombination; carrier mobility; nanoelectronics; cobalt; electrical conductivity; wide band gap semiconductors; semiconductor growth; carrier density; lanthanum; nanowires; field effect transistors; nanofabrication; titanium compounds

Other keywords: anatase TiO2 semiconductor materials; bandgap; cobalt codoping method; lanthanum codoping method; doped nanowires; anatase titanium dioxide nanowires; nanoelectronics devices; carrier concentration; n-type conductivity; electrical conductivity; electron-hole recombination; single nanowire field-effect transistor; TiO2:La,Co; facile solvothermal process; carrier mobility; electrical properties; rare earth element doping; as-synthesised nanowires; transition element

Subjects: Other field effect devices; Other methods of nanofabrication; Electrical properties of other inorganic semiconductors (thin films, low-dimensional and nanoscale structures); Nanometre-scale semiconductor fabrication technology; Oxide and ferrite semiconductors; Semiconductor doping; Doping and implantation of impurities; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Low-dimensional structures: growth, structure and nonelectronic properties; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Low-field transport and mobility; piezoresistance (semiconductors/insulators)

http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2019.0621
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content/journals/10.1049/mnl.2019.0621
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