Impact of non-uniformly doped double-gate junctionless transistor on the performance of 6T-SRAM bitcell
- Author(s): Spandita Panigrahi 1 ; Prasanna Kumar Sahu 1 ; Annada Shankar Lenka 1
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View affiliations
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Affiliations:
1:
Department of Electrical Engineering, National Institute of Technology , Rourkela 769008 , India
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Affiliations:
1:
Department of Electrical Engineering, National Institute of Technology , Rourkela 769008 , India
- Source:
Volume 15, Issue 2,
05
February
2020,
p.
72 – 77
DOI: 10.1049/mnl.2019.0375 , Online ISSN 1750-0443
© The Institution of Engineering and Technology
Received
18/06/2019,
Accepted
06/11/2019,
Revised
28/09/2019,
Published
05/02/2020
This work substantiates the impact of Gaussian doping on the electrical performance of double gate junctionless field-effect transistor (DG-JLFET). To get a better understanding of the influence of non-uniform doping, the device is compared with uniform-doped DG-JLFET with various concentrations. The device is later used to demonstrate its usability in six-transistor static random access memory (6T SRAM) bitcell by studying the performance metrics, i.e. stability noise margin and write delay. A comparison of performance metrics is also given with uniformly doped DG-JLFET-based-6T SRAM. Improvement in static noise margin was observed with Gaussian doping without compromising with write access time.
Inspec keywords: semiconductor doping; field effect transistor circuits; SRAM chips
Other keywords: write delay; performance metrics; write access time; double gate junctionless field-effect transistor; Gaussian doping; stability noise margin; static noise margin; electrical performance; uniformly doped DG-JLFET-based-6T SRAM; uniform-doped DG-JLFET; six-transistor static random access memory bitcell; nonuniformly doped double-gate junctionless transistor; 6T-SRAM bitcell
Subjects: Semiconductor storage; Semiconductor doping; Memory circuits
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