access icon free Synthesis and characterisation of CdSe QDs by using a chemical solution route

An efficient synthesis process approach based on a chemical solution route is developed for the cadmium selenide quantum dots (CdSe QDs) that utilise photonic and optoelectronic device manufacturing. The developed route consists of dissolving the cadmium chloride (CdCl2.H2O), 2-mercaptoethanol and sodium selenide anhydrous (Na2SeO3). The different characterisation parameters such as ultraviolet (UV) absorbance, x-ray diffraction (XRD), scanning electron microscopy, energy dispersive x-ray and transmission electron microscopy (TEM) were employed in order to develop the CdSe QDs. When the sample was analysed from the UV–visible studies, the bandgap was about 2.16 eV, whereas the bulk CdSe bandgap was about 1.78 eV. The developed CdSe QDs possessed a cubic crystal structure with crystalline dimensions of about 4.86 nm. Its surface morphology and structure showed the smooth appearance of the surface. The result indicated agglomerated spheres. Ultimately, according to XRD and TEM results, the crystalline dimension was determined in good agreements.

Inspec keywords: semiconductor growth; semiconductor quantum dots; energy gap; X-ray chemical analysis; X-ray diffraction; cadmium compounds; ultraviolet spectra; wide band gap semiconductors; optical constants; visible spectra; transmission electron microscopy; II-VI semiconductors; surface morphology; scanning electron microscopy

Other keywords: 2-mercaptoethanol; UV-visible spectra; optoelectronic device manufacturing; X-ray diffraction; efficient synthesis process approach; surface morphology; transmission electron microscopy; cubic crystal structure; agglomerated spheres; cadmium selenide quantum dots; ultraviolet absorbance; XRD; crystalline dimensions; characterisation parameters; chemical solution route; sodium selenide; dissolving; scanning electron microscopy; cadmium chloride; bulk CdSe bandgap; TEM; CdSe; energy dispersive X-ray analysis

Subjects: Optical constants and parameters (condensed matter); Solid surface structure; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Visible and ultraviolet spectra of II-VI and III-V semiconductors; Low-dimensional structures: growth, structure and nonelectronic properties; Electromagnetic radiation spectrometry (chemical analysis); II-VI and III-V semiconductors; Semiconductor superlattices, quantum wells and related structures

http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2019.0200
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