access icon free Approach to suppress the ambipolar current conduction and improve radiofrequency performance in polarity control electrically doped hetero TFET

In this work, a distinctive approach for the suppression of ambipolar behaviour of novel polarity control electrically doped hetero tunnel field effect transistor (TFET) has been reported. For this purpose, a wider band gap material, gallium arsenide phosphide has been employed at drain/channel regions. However, narrow band-gap material, silicon has been used in the source region. This combination of materials leads to a huge reduction in the ambipolar current and significant improvement in ON-state current due to the reduction in the electric field at the drain/channel interface and improvement in tunnelling rate at the source/channel interface, respectively. The proposed device also reduces the drain to source capacitance due to the presence of potential barrier width which leads to improvement in the radiofrequency performance. Therefore, the proposed device is very useful for ultralow power circuit applications. Moreover, polarity gates (PG1 and PG2) have been considered for the formation of n+ (drain) and p+ (source) regions. Hence, the proposed structure avoids ion implantation, random doping fluctuation, and high thermal budget unlike in the case of conventional TFETs, as the latter is physically doped. All the simulations have been performed using ATLAS software.

Inspec keywords: elemental semiconductors; gallium arsenide; indium compounds; tunnel transistors; energy gap; low-power electronics; semiconductor doping; semiconductor heterojunctions; tunnelling; silicon; field effect transistors; wide band gap semiconductors; III-V semiconductors

Other keywords: GaAsP; drain-channel interface; Si; thermal budget; ambipolar behaviour suppression; n+ regions; random doping fluctuation; drain-channel regions; source-channel interface; ATLAS software; radiofrequency performance; tunnelling rate; conventional TFETs; polarity gates; ambipolar current improvement; ultralow power circuit applications; source capacitance; polarity control electrically doped hetero TFET; gallium arsenide phosphide; ion implantation; wider band gap material; narrow band-gap material; ambipolar current conduction; p+ regions; novel polarity control electrically doped heterotunnel field effect transistor; electric field; source region; ON-state current

Subjects: Other field effect devices; Semiconductor doping

References

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      • 10. ATLAS Device Simulation Software, Silvaco Int., Santa Clara, CA, 2015.
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      • 9. De Marchi, M., Sacchetto, D., Frache, S., et al: ‘Polarity control in double-gate, gate-All-around vertically stacked silicon nanowire FETs’. Proc. IEEE Electronic Device Meeting, San Francisco, CA, USA, 2012, pp. 841844.
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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2018.5598
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