Comprehensive analysis of the effects of bending strain on GFET on ultra-flat flexible PI substrate using varnish PI

Kangmin Kim; Seulgi Park; Ohyun Kim

Comprehensive analysis of the effects of bending strain on GFET on ultra-flat flexible PI substrate using varnish PI

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Author(s): Kangmin Kim¹ ; Seulgi Park¹ ; Ohyun Kim¹
- Affiliations: 1: Department of Electrical Engineering , Pohang University of Science and Technology , Pohang 37673 , Republic of Korea
Source: Volume 14, Issue 3, 06 March 2019, p. 249 – 253
DOI: 10.1049/mnl.2018.5448 , Online ISSN 1750-0443

Received 06/08/2018, Accepted 13/11/2018, Revised 24/10/2018, Published 06/03/2019

The study investigated how bending strain affected graphene field-effect transistors (GFETs) that had been fabricated on ultra-flat flexible polyimide (PI) film, and the instability of graphene from repeated bending strain. An ultra-flat surface of PI film was achieved by using varnish PI with gradually increasing temperature. The average surface roughness was reduced from 23.23 to 0.32 nm. Bending strain distorted the symmetric atomic structure of graphene, and thereby caused a shift of two-dimensional peak by −42.67 cm⁻¹/% in the Raman spectrum and acted such as uniaxial strain. Bending strain on the GFET increased its energy bandgap, and the increased energy bandgap decreased the ‘off’ current and increased the current on/off ratio. Bending strain increased carrier concentration and decreased carrier mobility. Repeated bending strain damaged graphene by increasing defects, and thereby increased its resistivity by ∼25%. The damage could be recovered by thermal annealing at 200°C.

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Comprehensive analysis of the effects of bending strain on GFET on ultra-flat flexible PI substrate using varnish PI

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