access icon free Numerical analysis of high-voltage RESURF AlGaN/GaN high-electron-mobility transistor with graded doping buffer and slant back electrode

© The Institution of Engineering and Technology
Received 24/07/2018, Accepted 21/08/2019, Revised 19/07/2019, Published 23/10/2019

A reduced surface field (RESURF) AlGaN/GaN high-electron-mobility transistor (HEMT) with graded doping buffer (GDB) and slant back electrode (SBE) is proposed. In the GDB, the p-dopant density increases linearly both from top to bottom and right to left. The concentrated negative space charges in the lower-left corner of GDB attract the electric field lines from the channel and barrier towards the gate under OFF-state, which flats the electric field and enhances the breakdown voltage (V br). Additionally, the low p-dopant density near the top of GDB achieves the device with low ON-state resistance (R ON). The SBE flats the electric field along the channel above it and introduces a peak electric field near its edge. Simulation results show a V br of 2150 V and R ON of 7.05 Ωmm for the proposed device, compared with 1701 V and 7.73 Ωmm for the conventional back electrode RESURF HEMT (BE-RESURF HEMT) with the same gate -drain spacing. Moreover, due to the reduced depletion of 2DEG from the GDB, the proposed device shows slight increases in f T and f max (8.76 and 14.80 GHz), comparing with the conventional BE-RESURF HEMT (8.24 and 13.84 GHz).

Inspec keywords: aluminium compounds; wide band gap semiconductors; semiconductor device models; high electron mobility transistors; semiconductor device breakdown; semiconductor doping; gallium compounds; two-dimensional electron gas; III-V semiconductors; space charge

Other keywords: voltage 1701.0 V; GDB; slant back electrode; back electrode RESURF HEMT; high-voltage RESURF AlGaN-GaN high-electron-mobility transistor; graded doping buffer; voltage 2150.0 V; electric field lines; reduced surface field AlGaN-GaN high-electron-mobility transistor; breakdown voltage; ON-state resistance; electric field distribution; SBE; concentrated negative space charges; conventional BE-RESURF HEMT; gate-drain spacing; AlGaN-GaN; peak electric field; 2DEG; frequency 8.76 GHz; frequency 8.24 GHz; low p-dopant density; p-dopant density; frequency 13.84 GHz; frequency 14.8 GHz

Subjects: Semiconductor doping; Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices

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