This work realises a hetero-dielectric buried oxide vertical tunnel field effect transistor (HDB VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the concept of hetero-dielectric buried oxide (BOX) in VTFET is used to obtain the superior improvement in terms of different RF and linearity figure of merits such as , , , , Gain Bandwidth Product (GBP), , Transconductance Frequency Product (TFP), Transconductance Generation Factor (TGF), , , , , , and 1-dB compression point. Also, the influence of HfO₂ BOX length scaling on these FOMs is analysed. The results reveal that the HDB VTFET can be a promising contender to replace bulk metal-oxide semiconductor field-effect transistors in analogue/mixed signal system-on-chip and high-frequency microwave applications and the accuracy of this device is validated by TCAD Sentaurus simulator.