access icon free Electrical and optical properties of metal-sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film

Metal-sandwiched zinc oxide (ZnO)/titanium (Ti)/copper (Cu)/Ti/ZnO thin film systems were fabricated using magnetron sputtering technology and then annealed using a rapid thermal annealing system at temperatures from 100 to 400°C. The influence of the Ti film thicknesses and annealing temperatures on the surface morphologies, sheet resistance and optical properties were studied. The surface morphologies change a little with the annealing temperature rises. The sheet resistances reduce with the Ti film thickness or annealing temperature increasing. Both the max transmittance and figure of merit reduce with the increase of Ti film thickness. The max transmittance increases with the temperature increasing from 100 to 300°C and then reduces. However, the figure of merit increases with the temperature increasing which indicates that the metal-sandwiched ZnO/Ti/Cu/Ti/ZnO thin film system annealed at 400°C has the optimal performance.

Inspec keywords: titanium; electrical conductivity; semiconductor-metal boundaries; sputter deposition; surface morphology; zinc compounds; wide band gap semiconductors; copper; transparency; metallic thin films; II-VI semiconductors; semiconductor thin films; rapid thermal annealing; electrical resistivity

Other keywords: sheet resistance; figure of merit; magnetron sputtering technology; electrical properties; temperature 100 degC to 400 degC; optical properties; rapid thermal annealing; surface morphologies; ZnO-Ti-Cu-Ti-ZnO; metal-sandwiched transparent conductive thin film

Subjects: Optical properties of metals and metallic alloys (thin films, low-dimensional and nanoscale structures); Electrical properties of metal-nonmetal contacts; Sputter deposition; Electrical properties of metals and metallic alloys (thin films, low-dimensional and nanoscale structures); Deposition by sputtering; II-VI and III-V semiconductors; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor-metal interfaces; Annealing processes in semiconductor technology; Optical constants and parameters (condensed matter); Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Solid surface structure; Annealing processes; Thin film growth, structure, and epitaxy

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
      • 20. Kwon, J., Cho, H., Suh, Y.D., et al: ‘Flexible and transparent Cu electronics by low-temperature acid-assisted laser processing of Cu nanoparticles’, Adv. Mater. Technol., 2017, 2, No. 1600222, pp. 18.
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
    17. 17)
    18. 18)
    19. 19)
    20. 20)
    21. 21)
    22. 22)
    23. 23)
      • 26. Chen, P.S., Peng, C.H., Chang, Y.W., et al: ‘Improved indium-free transparent ZnO/metal/ZnO electrode through a statistical experimental design method’, Adv. Mater. Sci. Eng., 2016, 2016, p. 7258687.
    24. 24)
    25. 25)
    26. 26)
    27. 27)
    28. 28)
    29. 29)
      • 8. Ko, Y.D., Kim, J.Y., Joung, H.C., et al: ‘Low temperature deposited transparent conductive ITO and IZTO films for flat panel display applications’, J. Ceram. Process. Res., 2013, 14, (2), pp. 183187.
    30. 30)
    31. 31)
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