© The Institution of Engineering and Technology
In this work, a ferroelectric dielectric based TiN-GAA MOSFET with metal work-function variations (WFVs) has been proposed. The proposed model exhibits higher I on/I off ratio and lower subthreshold swing (58 mV/decade) as compared to conventional GAA MOSFET as a result of an amalgam of both gate all around (GAA) geometry and ferroelectric effect. The investigation is further extended to different technology nodes with WFV. The WFV induced threshold voltage is considered to be a function of the ratio of average grain size to grain area concept. The model exhibits a higher probability of threshold matching as compared to previously published results and the superiority is reflected in the Pelgrom plot. Thus the model can provide insight to counter the challenges created by WFV.
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