Impact of metal grain work function variability on ferroelectric insulation based GAA MOSFET

Biswajit Jena; Sidhartha Dash; Guru Prasad Mishra

Impact of metal grain work function variability on ferroelectric insulation based GAA MOSFET

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Author(s): Biswajit Jena¹ ; Sidhartha Dash¹ ; Guru Prasad Mishra¹
- Affiliations: 1: Department of Electronics and Communication Engineering , S‘O'A Deemed to be University , Bhubaneswar 751030 , India
Source: Volume 13, Issue 10, October 2018, p. 1378 – 1381
DOI: 10.1049/mnl.2018.5225 , Online ISSN 1750-0443

Received 03/01/2018, Accepted 08/06/2018, Revised 25/05/2018, Published 01/10/2018

In this work, a ferroelectric dielectric based TiN-GAA MOSFET with metal work-function variations (WFVs) has been proposed. The proposed model exhibits higher I _on/I _off ratio and lower subthreshold swing (58 mV/decade) as compared to conventional GAA MOSFET as a result of an amalgam of both gate all around (GAA) geometry and ferroelectric effect. The investigation is further extended to different technology nodes with WFV. The WFV induced threshold voltage is considered to be a function of the ratio of average grain size to grain area concept. The model exhibits a higher probability of threshold matching as compared to previously published results and the superiority is reflected in the Pelgrom plot. Thus the model can provide insight to counter the challenges created by WFV.

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Impact of metal grain work function variability on ferroelectric insulation based GAA MOSFET

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