Vertically aligned InGaN/GaN nanorod arrays with multiple quantum wells (MQWs) was prepared via inductively coupled plasma (ICP) followed by a further anisotropic wet etching method. It was demonstrated that the sizes of nanorods could be easily regulated in the ranges of 330–1090 nm by simply controlling the ICP etch parameters. The morphology characterisation results indicated that these nanorods are of straight and smooth appearance, and the length of nanorods is about 4 μm. Ultraviolet (UV) detectors based on nanorods arrays with different diameters were fabricated, which exhibited fast response/recovery speed and good response. The UV detecting performance was getting better with the decrease of nanorods diameter, which may be caused by the suppression of the dark current. This work provides an efficient route for fabricating the large-scale vertical aligned MQWs nanorods array and developing their fascinating applications.

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Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector

References

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