© The Institution of Engineering and Technology
In this work, the authors report a cost-effective fabrication method for making gallium nitride (GaN) light emitting diode (LED) arrays using SF6 plasma in a conventional reactive-ion etching (RIE) system. The etch rates for GaN were investigated with different radio-frequency power and carrier substrates. The surface roughness due to the etching was also determined for the various recipes used. The optical intensity and the temperature change during operation of the fabricated LED's were investigated. The effect of post-fabrication annealing on enhancement in the electrical and optical properties of the LED's was investigated.
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