access icon free GaN LEDs fabricated using SF6 plasma RIE

In this work, the authors report a cost-effective fabrication method for making gallium nitride (GaN) light emitting diode (LED) arrays using SF6 plasma in a conventional reactive-ion etching (RIE) system. The etch rates for GaN were investigated with different radio-frequency power and carrier substrates. The surface roughness due to the etching was also determined for the various recipes used. The optical intensity and the temperature change during operation of the fabricated LED's were investigated. The effect of post-fabrication annealing on enhancement in the electrical and optical properties of the LED's was investigated.

Inspec keywords: light emitting diodes; wide band gap semiconductors; annealing; sputter etching; gallium compounds; III-V semiconductors; surface roughness; etching

Other keywords: post-fabrication annealing; surface roughness; RIE; GaN; cost-effective fabrication method; optical intensity; reactive-ion etching system; fabricated LED; GaN LEDs; gallium nitride light; radio-frequency power; conventional reactive-ion etching system; etch rates

Subjects: Surface treatment (semiconductor technology); II-VI and III-V semiconductors; Light emitting diodes; Annealing processes in semiconductor technology

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