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Effective approach to enhance DC and high-frequency performance of electrically doped TFET

Effective approach to enhance DC and high-frequency performance of electrically doped TFET

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The need to overcome the shortcomings of conventional tunnel field-effect transistor (TFET) has driven many to come up with advanced TFET innovations. This Letter presents a comparative analysis of new techniques to enhance DC/radio-frequency (RF) performance of dopingless TFETs. In this regard, two advanced structures have been compared along with conventional electrically doped TFET. The devices – electrically doped TFET, low work-function strip electrically doped TFET and low work-function live strip electrically doped TFET are investigated in terms of DC, RF and linearity. This Letter focuses on electrical doping on dopingless substrate to reduce random dopant fluctuations and fabrication complications. The comparative analysis illustrates the importance of low work-function live strip (LWLS) over low work-function strip (LWS). In addition, an optimisation of length and position of LWS and LWLS is also investigated for providing fabrication ease.


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      • 16. Weidman, T.W., Michaelson, T., Ma, P.F., et al: ‘Atomic layer deposition of hafnium or zirconium alloy films’. US Patent, no. US9, 236, 467, B2, January 2016.
    14. 14)
    15. 15)
      • 10. Ana, F., Najeeb-ud-din, : ‘Gate workfunction engineering for deep sub-micron MOSFET's: motivation, features and challenges’, Int. J. Electron. Commun. Technol., 2011, 2, pp. 22309543.
    16. 16)
    17. 17)
    18. 18)
    19. 19)

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