Numerical analysis of film-loaded silicon nanowire optical rectangular waveguide: an effective optical sensing
- Author(s): Ritu Raj Singh 1 and Vishnu Priye 1
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View affiliations
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Affiliations:
1:
Department of Electronics , Indian Institute of Technology (Indian School of Mines) , Dhanbad , Jharkhand 826004 , India
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Affiliations:
1:
Department of Electronics , Indian Institute of Technology (Indian School of Mines) , Dhanbad , Jharkhand 826004 , India
- Source:
Volume 13, Issue 9,
September
2018,
p.
1291 – 1295
DOI: 10.1049/mnl.2018.0140 , Online ISSN 1750-0443
Subwavelength waveguide using silicon nanowires is investigated for its compatibility with silicon-on-insulator platform. A layer of silicon film over SiO2 substrate is employed to construct silicon nanowire waveguides that complies with standard 220 nm silicon height technology. The proposed structure is further investigated for its utility as an optical sensing element in photonic integrated circuits. Film-loaded silicon nanowire optical rectangular waveguide (SNORW) allows light to be guided inside low refractive indexed gapping region with optimised dimension. Fully numerical analysis is performed using finite-element method as evidence to support the guiding phenomena of this waveguide. Eventually, confinement factor and waveguide sensitivity is found to be linear with measurand refractive index. As a result, the purpose of this SNORW leads to an effective sensing in the new era of photonics.
Inspec keywords: rectangular waveguides; thin film sensors; finite element analysis; nanowires; semiconductor thin films; elemental semiconductors; refractive index; optical waveguide theory; integrated optics; silicon; optical sensors; nanosensors; nanophotonics; silicon-on-insulator
Other keywords: numerical analysis; Si; SiO2; silicon nanowire waveguides; film-loaded silicon nanowire optical rectangular waveguide; waveguide sensitivity; silicon film; guiding phenomena; size 220.0 nm; silicon-on-insulator platform; optical sensing element; low refractive indexed gapping region; standard 220 nm silicon height technology; photonic integrated circuits; finite-element method; effective optical sensing; optimised dimension; subwavelength waveguide; SiO2 substrate; confinement factor
Subjects: Sensing and detecting devices; Optical waveguides and couplers; Optical waveguides; Nanophotonic devices and technology; Nanophotonic devices and technology; Optical instruments and techniques; Integrated optics; Integrated optics; Microsensors and nanosensors
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