access icon free Negative bias temperature instability in SOI-like p-type metal oxide semiconductor devices

© The Institution of Engineering and Technology
Received 05/01/2018, Accepted 25/04/2018, Revised 19/04/2018, Published 01/08/2018

A silicon on insulator (SOI)-like bulk silicon (SLBS) MOSFET has been recently reported. An ‘n/p-/n+’ structure was contained in SLBS P Metal Oxide Semiconductor (PMOS) device, with ‘p-’ is made of 4H-SiC. This p-layer is fully depleted. In this work, negative bias temperature instability (NBTI) of SLBS pMOSFET is studied and compared with that in bulk and Fully Depleted (FD) SOI PMOSFET. The effects of stress temperature and body bias on NBTI of SLBS device are also be studied in this work. The work demonstrates an advantage of SLBS over bulk and FD SOI devices.

Inspec keywords: silicon-on-insulator; silicon compounds; elemental semiconductors; MOSFET; wide band gap semiconductors; silicon; negative bias temperature instability

Other keywords: Si; n-p-n+ structure; SiC; silicon on insulator; stress temperature; negative bias temperature instability; SOI-like p-type metal oxide semiconductor devices; SLBS pMOSFET; NBTI; body bias; FD SOI devices; SLBS PMOS device; bulk silicon MOSFET

Subjects: Insulated gate field effect transistors

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