Your browser does not support JavaScript!

Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime

Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Micro & Nano Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this work, the electrical characteristics and impact of physical and structural parameters on the performance of a novel heterojunction GaAs0.1Sb0.9-InAs semi-junctionless tunnel field effect transistor (SJTFET) is demonstrated. Unlike the conventional p-i-n tunnel field effect transistor, the n-channel SJTFET is a p+-p+-n structure having similar doping profile for the source and channel regions. First, all the structural and physical parameters are set to their initial values, and then, one parameter is varied to investigate its variation effect on the performance of SJTFET. Standard deviation and mean value of subthreshold swing, off-state and on-state current manifests that the performance of SJTFET is more sensitive to the gate workfunction, source–channel doping density and gate oxide thickness, respectively, in comparison with other structural parameters. The two-dimensional variation matrix of off-state current, on-state current and threshold voltage is calculated as a function of gate workfunction and source–channel p+ doping density for determining an optimum value for the source–channel doping concentration and gate workfunction. Due to the n-p+ drain–channel junction, the tunnel barrier in the off-state mode can be increased into the drain region, providing low off-state current in the ultra-scaled device and makes this device become less sensitive to short channel effects.


    1. 1)
    2. 2)
    3. 3)
      • 10. ATLAS user manual 2010’ (Silvaco International, Santa Clara, CA, USA, 2010, 5th edn).
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)

Related content

This is a required field
Please enter a valid email address