access icon free Effect of incorporation of highly-ordered a-Ge:H nanoparticles on the performance of perovskite solar cells

To improve light absorption, in this study, the narrow band gap highly-ordered free-standing hydrogenated amorphous germanium nanoparticles (a-Ge:H NPs) were introduced into the CH3NH3PbI3−x Cl x films. Here, the NPs were fabricated by means of the radio frequency plasma enhanced chemical vapour deposition system. The effects of hydrogen dilution ratio (RH) on the microstructure and bonding configuration of a-Ge:H NPs were investigated by Raman, transmission electron microscopy and Fourier transform infrared spectroscopy measurements. As RH increases, an improvement in the structure order of a-Ge:H NPs was observed. Compared with the pure CH3NH3PbI3−x Cl x films, the light absorption of the hybrid a-Ge:H NPs/CH3NH3PbI3−x Cl x active layers was improved, and the surface coverage of the hybrid active layers nearly reached 100%. This new finding provided a novel way to solve the universal unfavourable surface coverage problem that existed in the ultrasonic spray-coating process. Meanwhile, compared with the device that is based on pure CH3NH3PbI3−x Cl x films, due to the enhanced light absorption in the visible range, a ∼14.6% enhancement in the power conversion efficiency was achieved based on the hybrid a-Ge:H NPs/CH3NH3PbI3−x Cl x active layers.

Inspec keywords: transmission electron microscopy; amorphous semiconductors; light absorption; organic compounds; solar cells; hydrogen; Raman spectra; semiconductor thin films; bonds (chemical); elemental semiconductors; nanofabrication; narrow band gap semiconductors; semiconductor growth; Fourier transform infrared spectra; germanium; nanoparticles; plasma CVD

Other keywords: light absorption; perovskite solar cells; visible range; hydrogen dilution ratio; narrow band gap highly-ordered free-standing hydrogenated amorphous germanium nanoparticles; Ge:H; microstructure; ultrasonic spray-coating; transmission electron microscopy; power conversion efficiency; Fourier transform infrared spectroscopy; bonding configuration; Raman spectroscopy; radiofrequency plasma enhanced chemical vapour deposition

Subjects: Amorphous and glassy semiconductors; Infrared and Raman spectra in disordered solids (inc. glasses and polymers); Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Structure of amorphous, disordered and polymeric materials; Nanometre-scale semiconductor fabrication technology; Elemental semiconductors; Photoelectric conversion; solar cells and arrays; Optical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures); Plasma applications in manufacturing and materials processing; Solar cells and arrays; Optical properties of amorphous and glassy semiconductors and insulators (thin films, low-dimensional and nanoscale structures); Nanofabrication using thin film deposition methods; Chemical vapour deposition; Chemical vapour deposition; Thin film growth, structure, and epitaxy

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2017.0876
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