High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode

Mohamed Abdel-Rahman; Khaled Issa; Muhammad F. Zia; Mohammad Alduraibi; Mohammad Siraj; Amr Ragheb; Saleh Alshebeili

High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode

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Author(s): Mohamed Abdel-Rahman¹ ; Khaled Issa² ; Muhammad F. Zia³ ; Mohammad Alduraibi^{4, 5} ; Mohammad Siraj¹ ; Amr Ragheb² ; Saleh Alshebeili^{1, 2}
- Affiliations: 1: Electrical Engineering Department , College of Engineering, King Saud University , P.O. Box 800, Riyadh 11421 , Saudi Arabia ;
  2: KACST Technology Innovation Center in Radio frequency and Photonics for the e-Society (RFTONICS), King Saud University , Riyadh 11421 , Saudi Arabia ;
  3: Prince Sultan Advanced Technologies Research Institute, King Saud University , P.O. Box 800, Riyadh 11421 , Saudi Arabia ;
  4: Department of Physics & Astronomy , College of Science, King Saud University , P.O. Box 2455, Riyadh 11451 , Saudi Arabia ;
  5: National Center for Applied Physics, King Abdulaziz City for Science and Technology , Riyadh 11442 , Saudi Arabia
Source: Volume 13, Issue 5, May 2018, p. 680 – 683
DOI: 10.1049/mnl.2017.0728 , Online ISSN 1750-0443

Received 08/10/2017, Accepted 02/02/2018, Revised 20/12/2017, Published 01/05/2018

This work reports on the fabrication of an improved sensitivity metal–insulator–metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V–V₂O₅–Al) thin film layers. The MIM diode is fabricated using electron-beam lithography, sputter deposition and metal liftoff techniques. X-ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V₂O₅ insulating thin film. Electrical characterisation of the fabricated V–V₂O₅–Al shows a clear high sensitivity at −316 mV that reaches −8.52 V⁻¹ with a dynamic resistance of 5.024 kΩ.

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High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode

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