Carrier relaxation time modelling of monolayer black phosphorene

Ali H. Pourasl; Mohammad T. Ahmadi; Razali Ismail

Carrier relaxation time modelling of monolayer black phosphorene

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Author(s): Ali H. Pourasl¹ ; Mohammad T. Ahmadi^{1, 2} ; Razali Ismail¹
- Affiliations: 1: Computational Nanoelectronic Research Group (CoNE), Faculty of Electrical Engineering , Universiti Teknologi Malaysia , 81310 Skudai, Johor , Malaysia ;
  2: Nanotechnology Research Center Nanoelectronic Group, Physics Department , Urmia University , 57147 Urmia , Iran
Source: Volume 12, Issue 10, October 2017, p. 758 – 762
DOI: 10.1049/mnl.2017.0242 , Online ISSN 1750-0443

Received 19/04/2017, Accepted 22/05/2017, Published 01/10/2017

Phosphorene as an innovative structure that can be exfoliated similarly to the graphene with a direct, inherent and suitable bandgap presents exceptional prospects for future generations of electronic devices. Phosphorene possess high carrier mobility, therefore, in this work its carrier statistics in the form of monolayer phosphorene in the non-degenerate limit is analytically modelled and the mobility relation with carrier relaxation time is investigated. Energy dispersion relation is used to develop and calculate the required parameters for carrier relaxation time model which is an important parameter in conduction theory. On the other hand, the dependency of carrier velocity and mobility to voltage, normalised Fermi energy and temperature are modelled. Finally, the carrier relaxation time as a function of carrier mobility is modelled and its dependency towards temperature and normalised Fermi energy is discussed. It is shown that the relaxation time is strongly dependent on the carrier mobility which increases by increasing the mobility.

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Carrier relaxation time modelling of monolayer black phosphorene

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