PL of low-density InAs/GaAs quantum dots with different bimodal populations

Ying Wang; Xinzhi Sheng; Yao Liu; Baolai Liang; Xiaoli Li; Qinglin Guo; Yuriy I. Mazur; Morgan E. Ware; Gregory J. Salamo

PL of low-density InAs/GaAs quantum dots with different bimodal populations

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Author(s): Ying Wang^{1, 2} ; Xinzhi Sheng¹ ; Yao Liu² ; Baolai Liang² ; Xiaoli Li² ; Qinglin Guo² ; Yuriy I. Mazur³ ; Morgan E. Ware³ ; Gregory J. Salamo³
- Affiliations: 1: School of Science , Beijing Jiaotong University , Beijing 100044 , People's Republic of China ;
  2: College of Physics Science and Technology , Hebei University , Baoding 071002 , People's Republic of China ;
  3: Institute for Nanoscience and Engineering, University of Arkansas , AR 72701 , USA
Source: Volume 12, Issue 9, September 2017, p. 599 – 604
DOI: 10.1049/mnl.2016.0779 , Online ISSN 1750-0443

Received 08/12/2016, Accepted 27/03/2017, Revised 26/02/2017, Published 01/09/2017

Optical response of the indium arsenide (InAs)/gallium arsenide (GaAs) quantum dots (QDs) with a bimodal distribution is investigated through varying an initial GaAs capping layer between 35 and 18 monolayers. Photoluminescence (PL) measurements confirm that a thinner initial capping layer can reduce the QD dimensions and also modify the population ratio between the large QDs and the small QDs. Therefore, PL quenching related to QD dimension and carrier transfer between the bimodal QD populations has been affected. Manipulation of the initial GaAs capping layer provides a feasible approach to tailor the formation and optical performance of InAs QDs for optoelectronic device applications.

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PL of low-density InAs/GaAs quantum dots with different bimodal populations

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