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access icon free Performance estimation of polarity controlled electrostatically doped tunnel field-effect transistor

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      • 11. Pala, M.G., Esseni, D., Conzatti, F.: ‘Impact of interface traps on the IV curves of InAs tunnel-FETs and MOSFETs: a full quantum study’. Proc. IEEE IEDM, December 2012, pp. 14.
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      • 6. De Marchi, M., Sacchetto, D., Frache, S., et al: ‘Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs’. Proc. IEEE Electron Devices Meeting (IEDM), December 2012, pp. 8.4.18.4.4.
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