Raman and X-ray photoelectron spectroscopy investigation of the effect of gamma-ray irradiation on MoS2
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The effect of gamma-ray (γ-ray) irradiation on the material characteristics of nanometre scale films of molybdenum disulphide (MoS2) has been investigated. 3.2, 4.5, and 5.2 nm thick MoS2 films (measured by atomic force microscopy) were grown on Si by using a two-step synthesis method (sputtering of Mo, followed by sulphurisation). The samples were subsequently exposed to γ-ray irradiation (dose of 120 MRad). Dramatic chemical changes in the MoS2 films after irradiation were characterised by micro-Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical microscopy. Micro-Raman spectroscopy showed the disappearance of the E 2g 1 and A 1g modes after irradiation. XPS revealed that the MoS2 crystal structure was converted to molybdenum oxide (MoO x ). It is hypothesised that S vacancies are formed due to the γ-ray irradiation, which subsequently transforms MoS2 to MoO x .