Raman and X-ray photoelectron spectroscopy investigation of the effect of gamma-ray irradiation on MoS2

Raman and X-ray photoelectron spectroscopy investigation of the effect of gamma-ray irradiation on MoS2

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Micro & Nano Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The effect of gamma-ray (γ-ray) irradiation on the material characteristics of nanometre scale films of molybdenum disulphide (MoS2) has been investigated. 3.2, 4.5, and 5.2 nm thick MoS2 films (measured by atomic force microscopy) were grown on Si by using a two-step synthesis method (sputtering of Mo, followed by sulphurisation). The samples were subsequently exposed to γ-ray irradiation (dose of 120 MRad). Dramatic chemical changes in the MoS2 films after irradiation were characterised by micro-Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical microscopy. Micro-Raman spectroscopy showed the disappearance of the E 2g 1 and A 1g modes after irradiation. XPS revealed that the MoS2 crystal structure was converted to molybdenum oxide (MoO x ). It is hypothesised that S vacancies are formed due to the γ-ray irradiation, which subsequently transforms MoS2 to MoO x .

Inspec keywords: vacancies (crystal); gamma-ray effects; molybdenum compounds; solid-state phase transformations; semiconductor growth; semiconductor thin films; semiconductor materials; sputter deposition; nanostructured materials; Raman spectra; nanofabrication; optical microscopy; atomic force microscopy; X-ray photoelectron spectra

Other keywords: molybdenum disulphide; silicon substrates; crystal structure; size 5.2 nm; Raman spectroscopy; radiation absorbed dose 120 Mrad; structural transformations; size 3.2 nm; sulphurisation; MoS2; chemical changes; atomic force microscopy; size 4.5 nm; sputtering; nanometre scale films; Si; XPS; vacancies; X-ray photoelectron spectroscopy; two-step synthesis method; semiconductor material; molybdenum oxide; material characteristics; gamma-ray irradiation; optical microscopy

Subjects: Gamma ray effects; Electron spectroscopy for chemical analysis (photoelectron, Auger spectroscopy, etc.); Optical properties of other inorganic semiconductors and insulators (thin films/low-dimensional structures); Photoelectron spectra of semiconductors and insulators; Solid surface structure; Other semiconductor materials; Interstitials and vacancies; Solid-solid transitions; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder; Deposition by sputtering; Nanometre-scale semiconductor fabrication technology; Physical properties of thin films, nonelectronic; Radiation effects (semiconductor technology); Sputter deposition; Infrared and Raman spectra in inorganic crystals; Thin film growth, structure, and epitaxy


    1. 1)
      • 1. Novoselov, K.S., Jiang, D., Schedin, F., et al: ‘Two-dimensional atomic crystals’. Proc. National Academy Sciences USA, April 2005, vol. 102, pp. 1045110453.
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
      • 14. Park, J., Choudhary, N., Smith, J., et al: ‘Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices’, Appl. Phys. Lett., 2015, 106, pp. 27.
    15. 15)
    16. 16)
    17. 17)
    18. 18)
    19. 19)
    20. 20)
    21. 21)

Related content

This is a required field
Please enter a valid email address