http://iet.metastore.ingenta.com
1887

Enhanced performance of large-area vertical light-emitting diodes treated by laser irradiation

Enhanced performance of large-area vertical light-emitting diodes treated by laser irradiation

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Micro & Nano Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this work, a comparative analysis of vertical light-emitting diodes (VLEDs) examining the device properties is performed with different surface treatment schemes. The VLEDs on graphite substrate are fabricated by the laser lift-off and the wafer bonding processes. The significance of KrF laser irradiation to form protrusions on the surfaces of undoped gallium nitride (u-GaN) and n-GaN is analysed in detail. The light output power of the fabricated VLEDs is significantly increased through the formation of micro-sized protrusions by the laser irradiation. For VLED irradiated with an energy density of 600 mJ/cm2 on n-GaN surface with a thin u-GaN layer, the light output power is improved by 24.8% at 350 mA without degradation of electrical properties compared with that of the conventional VLED.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
      • 5. Wang, C., Kim, N.Y.: ‘Electrical characterization and surface morphology of optimized Ti/Al/Ta/Au ohmic contacts for AlGaN/GaN HEMTs’, Nanoscale Res. Lett., 2012, 7, (107), pp. 18.
    6. 6)
    7. 7)
      • 7. Quan, Z.J., Liu, J.L., Fang, F., et al: ‘A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices’, J. Appl. Phys., 2015, 118, (19), pp. 16061614.
    8. 8)
    9. 9)
    10. 10)
      • 10. Lee, W.C., Wang, S.J., Uang, K.M., et al: ‘Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaOx surface film’, Jpn J. Appl. Phys., 2011, 50, p. 04DG06-1-4.
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
    17. 17)
    18. 18)
      • 18. Sergio, F.G., Gregor, K., Enrique, C.P., et al: ‘In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction’, J. Appl. Phys., 2008, 104, p. 033541-1-6.
http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2016.0699
Loading

Related content

content/journals/10.1049/mnl.2016.0699
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address