access icon free Performance investigation of hetero material (InAs/Si)-based charge plasma TFET

The charge plasma-based tunnel field-effect transistor (TFET) has been seen as the potential candidate to replace the conventional TFET as it offers fabrication simplicity and its proficiency to be used for ultra-low-power applications. A charge plasma TFET (CPTFET) with hetero materials for enhancement of device performance is presented. For this, a narrow bandgap material (InAs) is used instead of silicon in source region for reducing the lateral tunnelling distance at the source/channel interface. The reduced tunnelling width at the source/channel junction enables higher band-to-band tunnelling generation rate, thus the device offers higher ON-state current. In this context, a comparative study of CPTFET and hetero junction charge plasma TFET (H-CPTFET) has been performed in terms of transfer characteristic (I dsV gs), transconductance (g m ), gate-to-drain capacitance (C gd), cut-off frequency (f T) and gain-bandwidth product. In addition to this, the effect of variation in channel length (L g) and drain to source voltage (V ds) on the DC and analogue/radio frequency performance of H-CPTFET is also analysed.

Inspec keywords: tunnel transistors; narrow band gap semiconductors; elemental semiconductors; indium compounds; low-power electronics; field effect transistors; semiconductor junctions; III-V semiconductors

Other keywords: gain-bandwidth product; ON-state current; tunnel held-effect transistor; transconductance; InAs-Si; hetero junction charge plasma TFET; channel length variation effect; narrow bandgap material; drain to source voltage; source-channel interface; hetero material-based charge plasma TFET; transfer characteristics; gate-to-drain capacitance; source region; lateral tunnelling distance reduction; device performance enhancement; cut-off frequency; CPTFET; band-to-band tunnelling generation rate; source-channel junction; ultra-low-power applications; H-CPTFET

Subjects: Other field effect devices

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2016.0688
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