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Performance investigation of hetero material (InAs/Si)-based charge plasma TFET

Performance investigation of hetero material (InAs/Si)-based charge plasma TFET

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The charge plasma-based tunnel field-effect transistor (TFET) has been seen as the potential candidate to replace the conventional TFET as it offers fabrication simplicity and its proficiency to be used for ultra-low-power applications. A charge plasma TFET (CPTFET) with hetero materials for enhancement of device performance is presented. For this, a narrow bandgap material (InAs) is used instead of silicon in source region for reducing the lateral tunnelling distance at the source/channel interface. The reduced tunnelling width at the source/channel junction enables higher band-to-band tunnelling generation rate, thus the device offers higher ON-state current. In this context, a comparative study of CPTFET and hetero junction charge plasma TFET (H-CPTFET) has been performed in terms of transfer characteristic (I dsV gs), transconductance (g m ), gate-to-drain capacitance (C gd), cut-off frequency (f T) and gain-bandwidth product. In addition to this, the effect of variation in channel length (L g) and drain to source voltage (V ds) on the DC and analogue/radio frequency performance of H-CPTFET is also analysed.

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