access icon free Thickness-dependent photoelectrochemical property of tin disulphide nanosheets

IV–VI group compounds are excellent candidates for optoelectronics. Here, a solvothermal controlled synthesis of SnS2 nanosheets with different thickness is reported. The bandgap of nanosheets with thickness of 15 nm was estimated as 2.0 eV which is quite suitable for visible light harvesting. The nanosheets show about 180 times photoinduced current compare with the 35 nm nanosheets and fast response time of 4.9 ms, indicating that the SnS2 nanosheets are potential materials for high-performance photodetectors.

Inspec keywords: nanofabrication; nanostructured materials; photoemission; photoelectrochemistry; photoconductivity; semiconductor growth; tin compounds; IV-VI semiconductors; energy gap

Other keywords: solvothermal controlled synthesis; photoinduced current; thickness dependence; IV-VI group compounds; optoelectronics; band gap; visible light harvesting; tin disulphide nanosheets; size 35 nm; SnS2; time 4.9 ms; size 15 nm; high-performance photodetectors; photoelectrochemical property

Subjects: Other semiconductor materials; Electronic structure of other inorganic semiconductors and insulators (thin films, low dimensional and nanoscale structures); Photoelectron spectra of semiconductors and insulators; Electrochemistry and electrophoresis; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Nanometre-scale semiconductor fabrication technology; Photoconduction and photovoltaic effects; photodielectric effects; Other methods of nanofabrication; Photoconducting materials and properties

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2016.0654
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