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IV–VI group compounds are excellent candidates for optoelectronics. Here, a solvothermal controlled synthesis of SnS2 nanosheets with different thickness is reported. The bandgap of nanosheets with thickness of 15 nm was estimated as 2.0 eV which is quite suitable for visible light harvesting. The nanosheets show about 180 times photoinduced current compare with the 35 nm nanosheets and fast response time of 4.9 ms, indicating that the SnS2 nanosheets are potential materials for high-performance photodetectors.
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