access icon free Improvement of short channel performance of junction-free charge trapping 3D NAND flash memory

© The Institution of Engineering and Technology
Received 30/09/2016, Accepted 17/10/2016, Published 01/01/2017

This work investigates the effect of channel engineering on the short channel performance of considered sub-20-nm 3D NAND flash memory. Here, the threshold voltage roll-off (ΔV th), subthreshold swing and drain induced barrier lowering metrics is studied to evaluate the short channel effects (SCEs) for the examined device. The effect of variation in doping density on SCEs of proposed channel engineered NAND flash memory is also studied. Based on the observation, a thin layer of high doping concentration in the centre of the channel, covering 25% of channel area, has been found to improve the SCE of NAND flash memory compared with the device with uniform channel doping while maintaining sufficient drive current.

Inspec keywords: flash memories; doping profiles; performance evaluation

Other keywords: size 20 nm; short channel effect evaluation; SCE evaluation; subthreshold swing; doping concentration; short channel performance Improvement; threshold voltage roll-off; doping density variation effect; drain induced barrier; channel engineering effect; junction-free charge trapping 3D NAND flash memory

Subjects: Semiconductor storage; Memory circuits; Performance evaluation and testing

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