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access icon free Photovoltaic performance of an alternating cold–hot method deposited CdSe thin films

  • Author(s): Yaoyao Jiang 1 ; Yan Li 1 ; Danyu Wang 1 ; Deqing Mo 2 ; Fuxin Zhong 1 ; Yunpeng Gao 1 ; Yinian Zhu 1, 3
    • View affiliations
    • Affiliations: 1: College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541006, People's Republic of China ;
      2: College of Life and Environmental Science, Guilin University of Electronic Science and Technology, Guilin 541006, People's Republic of China ;
      3: College of Environmental Science and Engineering, Guilin University of Technology, Guilin 541006, People's Republic of China
  • Source: Volume 12, Issue 6, June 2017, p. 391 – 395
    DOI:  10.1049/mnl.2016.0580 , Online ISSN 1750-0443
© The Institution of Engineering and Technology
Received 06/10/2016, Accepted 17/02/2017, Revised 02/12/2016, Published 01/06/2017

Cadmium selenide (CdSe) thin films were prepared on indium tin oxide substrate by an alternating cold–hot method, in which cadmium nitrate solution was used as a cold deposition solution, while sodium selenite and potassium borohydride mixed solution was used as a hot deposition solution. The influences of the preparation conditions such as the concentration of Cd(NO3)2, the number of deposition cycle and the cycle time, on the photoelectric performance of the sample under simulated sunlight were explored. The results show that the CdSe thin film prepared under the reaction conditions of 0.06 mol/l Cd(NO3)2 at the tenth deposition cycle (30 s per cycle) reaches the highest photovoltage of 0.285 V. Under the simulated solar illumination, the open-circuit voltage and short-circuit currents are 0.419 V and 5.57 mA/cm2, respectively. X-ray diffraction indicates that the strongest diffraction peak at 42.215° of the (111) crystal plane is corresponding to 15.15 nm CdSe nanocrystals. Scanning electron microscopy observation shows that the thickness of the CdSe film is about 200 nm and the size of the spherical and uniformly dispersed nanocrystals is around 50 nm.

Inspec keywords: semiconductor thin films; nanofabrication; semiconductor growth; II-VI semiconductors; photovoltaic effects; liquid phase deposition; solar cells; X-ray diffraction; wide band gap semiconductors; nanostructured materials; scanning electron microscopy; short-circuit currents; cadmium compounds

Other keywords: indium tin oxide substrate; open-circuit voltage; cadmium selenide thin films; voltage 0.419 V; (111) crystal plane; CdSe; voltage 0.285 V; cadmium nitrate solution; scanning electron microscopy; simulated sunlight; uniformly dispersed nanocrystals; photovoltaic performance; solar cell; sodium selenite-potassium borohydride mixed solution; photoelectric performance; photovoltage; solution concentration; short-circuit currents; alternating cold-hot method; cycle time; X-ray diffraction; deposition cycle; ITO; spherical size; simulated solar illumination; cold deposition solution; hot deposition solution

Subjects: Nanofabrication using crystal growth techniques; Thin film growth, structure, and epitaxy; Photoconducting materials and properties; Nanofabrication using thin film deposition methods; Deposition from liquid phases (melts and solutions); Photoelectric conversion; solar cells and arrays; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Solar cells and arrays; Photoconduction and photovoltaic effects; photodielectric effects; Nanometre-scale semiconductor fabrication technology; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Deposition from liquid phases; II-VI and III-V semiconductors

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