http://iet.metastore.ingenta.com
1887

Photon-spin coherent manipulation of piezotronic nanodevice

Photon-spin coherent manipulation of piezotronic nanodevice

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Micro & Nano Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The purpose of the present work is to investigate the spin dynamics of nanoscale junction formed of diluted ferromagnetic semiconductor as two leads and a curved semiconducting nanowire (NW). This NW is zinc oxide (ZnO) nanostructure, since it exhibits piezoelectric property. The spin transport characteristics of such junction is investigated by deducing the spin current for both parallel and antiparallel spin alignments using the effective mass method and Floquet theory. The effect of strain, generated due to bending the NW, on the spin current is investigated. Rashba spin-orbit interaction, the influence of the photon energy of the induced ac-field and magnetic field are considered. Numerical calculations show that the spin current, for both parallel and antiparallel spin alignments, varies with the induced strain strongly. This variation might be due to piezoelectric effect. Also, the strain gauge factor is calculated. Results for large gauges factor may find applications in different fields of nanotechnology. Results show that the spin transport characteristics are highly sensitive to strain mainly due to the shift in Fermi energy due to piezoelectric effect. Also, results show that the variation of Young's modulus of ZnO NW with strain and it might be monitored by giant magnetoresistance.

Inspec keywords: effective mass; bending; Fermi level; wide band gap semiconductors; spin-orbit interactions; II-VI semiconductors; ferromagnetic materials; nanowires; piezoelectricity; zinc compounds; piezoelectric devices; spin dynamics; spin polarised transport; magnetic fields; strain gauges; semimagnetic semiconductors

Other keywords: semiconducting nanowire; Fermi energy; strain gauge factor; numerical calculations; Young's modulus; spin dynamics; zinc oxide nanostructure; Rashba spin-orbit interaction; bending; photon-spin coherent manipulation; giant magnetoresistance; piezotronic nanodevice; induced ac-field; Floquet theory; effective mass; piezoelectric effect; strain effect; bionanotechnology; antiparallel spin alignments; nanoscale junction; diluted ferromagnetic semiconductor; spin transport characteristics; spin current; photon energy

Subjects: Low-dimensional structures: growth, structure and nonelectronic properties; Effective mass and g-factors (condensed matter electronic structure); Spin polarized transport; Mechanical variables measurement; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; II-VI and III-V semiconductors; Deformation and plasticity; Piezoelectric and ferroelectric materials; Dynamic properties of magnetic materials; Magnetic semiconductors; Electronic structure of crystalline semiconductor compounds and insulators; Piezoelectric devices; Measurement of mechanical variables; Deformation, plasticity and creep; Piezoelectricity and electrostriction; Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter)

References

    1. 1)
    2. 2)
      • 2. Xu, Y., Awschalom, D.D., Nitta, J.: ‘Handbook of spintronics’ (Springer-Verlag, Berlin, Heidelberg, 2015).
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
    17. 17)
    18. 18)
    19. 19)
    20. 20)
    21. 21)
    22. 22)
      • 22. Gao, Z.Y., Zhou, J., Gu, Y.D., et al: ‘Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor’, J. Appl. Phys., 2009, 105, pp. 113707-1113707-6.
    23. 23)
    24. 24)
      • 24. Abdelrazek, A.S., El-Banna, M.M., Phillips, A.H.: ‘Piezoelectric effect on spin transport characteristics of ferromagnet/semiconductor junction’, Open Sci. J. Mod. Phys., 2015, 2, (5), pp. 7279.
    25. 25)
    26. 26)
    27. 27)
    28. 28)
      • 28. Zein, W.A., Phillips, A.H., Omar, O.A.: ‘Quantum spin transport in mesoscopic interferometer’, Prog. Phys., 2007, 4, pp. 1821.
    29. 29)
      • 29. Zein, W.A., Phillips, A.H., Omar, O.A.: ‘Spin coherent transport in mesoscopic interference device’, Nano Brief Rep. Rev., 2007, 2, (6), pp. 389392.
    30. 30)
      • 30. Zein, W.A., Ibrahim, N.A., Phillips, A.H.: ‘Spin dependent transport through Aharonov–Casher ring irradiated by an electromagnetic field’, Prog. Phys., 2010, 4, pp. 7881.
    31. 31)
    32. 32)
    33. 33)
    34. 34)
    35. 35)
    36. 36)
    37. 37)
      • 37. Wang, G., Li, X.: ‘Predicting the young's modulus of nanowires from first-principles calculations on their surface and bulk materials’, J. Appl. Phys., 2008, 104, pp. 113517-1113517-7.
    38. 38)
    39. 39)
      • 39. Xue, H.Z., Pan, N., Li, M., et al: ‘Probing the strain effect on near band edge emission of a curved ZnO nanowire via spatially resolved cathode-luminescence’, Nanotechnology, 2010, 21, p. 215701(5pp).
    40. 40)
    41. 41)
    42. 42)
    43. 43)
      • 43. Sun, Y., Thompson, S.E., Nishida, T.: ‘Physics of strain effects in semiconductors and metal oxide semiconductor field effect transistors’, J. Appl. Phys., 2007, 101, pp. 104503-1104503-22.
    44. 44)
    45. 45)
    46. 46)
    47. 47)
    48. 48)
      • 48. Vera, Marun, I.J., Jansen, R.: ‘Multiterminal semiconductor/ferromagnet probes for spin filter scanning tunneling microscopy’, J. Appl. Phys., 2009, 105, (7), pp. 07D520-107D520-3.
    49. 49)
http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2016.0264
Loading

Related content

content/journals/10.1049/mnl.2016.0264
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address