© The Institution of Engineering and Technology
The performance and electrical characteristics of hybrid carbon nanotube field effect transistor (CNTFET) are studied. Hybrid CNTFET consists of heavily doped carbon nanotube (CNT) as a one contact connected to intrinsic CNT as a channel. The opposite side of the channel is connected to a metal as the other contact. If the source is the metal and the drain is the heavily doped, this type is called metal–semiconductor hybrid CNT or MSH-CNTFET. While when the source is the heavily doped and the drain is the metal, this is called semiconductor–metal hybrid CNT or SMH-CNTFET. The electrical characteristics of the device has been studied using a two-dimensional (2D) quantum mechanical simulator by solving 2D Poisson's equation self consistently with Non-equilibrium Green function (NEGF). The proposed devices are found to overcome the ambipolar conduction of Schottky barrier CNTFETs and improve frequency performance of metal–oxide–semiconductor CNTFETs.
References
-
-
1)
-
9. Farhana, F., Alam, A.Z.: ‘Development of high frequency 14 nm CNTFET model’, Mater. Today Proc., 2016, 3, (2), pp. 258–264 (doi: 10.1016/j.matpr.2016.01.067).
-
2)
-
7. Raeini, A.G.N., Kordrostami, Z.: ‘Asymmetric lightly doped Schottky barrier CNTFET’, Micro Nano Lett., 2016, 11, (3), pp. 169–173 (doi: 10.1049/mnl.2015.0434).
-
3)
-
12. Wind, S.J., Appenzeller, J., Martel, R., et al: ‘Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors’, J. Vac. Sci. Technol. B, 2002, 20, pp. 2798–2801 (doi: 10.1116/1.1521731).
-
4)
-
11. Guo, J., Lundstrom, M., Datta, S.: ‘Performance projections for ballistic carbon nanotube field-effect transistors’, Appl. Phys. Lett., 2002, 80, (17), pp. 3192–3194 (doi: 10.1063/1.1474604).
-
5)
-
8. Pulfrey, D.L.: ‘Critique of high-frequency performance of carbon nanotube FETs’. 37th European Solid State Device Research Conf., ESSDERC, September 2007, pp. 234–238.
-
6)
-
14. Kordrostami, Z., Sheikhi, M.H., Zarifkar, A.: ‘Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs’, IEEE Trans. Nanotechnol., 2012, 11, (3), pp. 526–533 (doi: 10.1109/TNANO.2011.2181998).
-
7)
-
6. Ossaimee, M.I., Gamal, S.H., Kirah, K., et al: ‘Ballistic transport in Schottky barrier carbon nanotube FETs’, Electron. Lett. Circuit Theory Des., 2008, 44, (5), pp. 336–337 (doi: 10.1049/el:20080241).
-
8)
-
2. Park, J.Y., Rosenblatt, S., Yaish, Y., et al: ‘Electron–phonon scattering in metallic single-walled carbon nanotubes’, Nano Lett., 2004, 4, pp. 517–520 (doi: 10.1021/nl035258c).
-
9)
-
1. Avouris, P., Chen, Z., Perebeinos, V.: ‘Carbon-based electronics’, Nat. Nanotechnol., 2007, 2, pp. 605–615 (doi: 10.1038/nnano.2007.300).
-
10)
-
14. Shaker, A., Ossaimee, M., Zekry, A., et al: ‘Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET’, Superlattices Microstruct., 2015, 86, pp. 518–530 (doi: 10.1016/j.spmi.2015.08.008).
-
11)
-
6. Lin, Y.M., Appenzeller, J., Knoch, J., et al: ‘High-performance carbon nanotube field-effect transistor with tunable polarities’, IEEE Trans. Nanotech., 2005, 4, pp. 481 (doi: 10.1109/TNANO.2005.851427).
-
12)
-
5. Appenzeller, J., Lin, Y.M., Knoch, J., et al: ‘Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design’, IEEE Trans. Electron. Dev., 2005, 52, p. 2568 (doi: 10.1109/TED.2005.859654).
-
13)
-
1. Heinze, S., Tersoff, J., Martel, R., et al: ‘Carbon nanotubes as Schottky barrier transistors’, Phys. Rev. Lett., 2002, 89, (10), p. 106801 (doi: 10.1103/PhysRevLett.89.106801).
-
14)
-
2. Guo, J., Datta, S., Lundstrom, M.: ‘A numerical study of scaling issues for Schottky barrier carbon nanotube transistors’, IEEE Trans. Electron Devices, 2004, 51, (2), pp. 172–177 (doi: 10.1109/TED.2003.821883).
-
15)
-
4. Lu, R.F., Lu, Y.P., Lee, S.Y., et al: ‘Terahertz response in single – walled carbon nanotube transistor: a real-time quantum dynamics simulation’, Nanotechnology, 2009, 20, (50), p. 505401 (doi: 10.1088/0957-4484/20/50/505401).
http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2016.0241
Related content
content/journals/10.1049/mnl.2016.0241
pub_keyword,iet_inspecKeyword,pub_concept
6
6