Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering

Kaushal Nigam; Pravin kondekar; Dheeraj Sharma

Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering

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Author(s): Kaushal Nigam ¹ ; Pravin kondekar ¹ ; Dheeraj Sharma ¹
- Affiliations: 1: Electronics and Communication Engineering Discipline, Indian Institute of Information Technology, Jabalpur 482005, India
Source: Volume 11, Issue 8, August 2016, p. 460 – 464
DOI: 10.1049/mnl.2016.0178 , Online ISSN 1750-0443

Received 19/04/2016, Accepted 23/05/2016, Published 01/08/2016

A dual material control gate tunnel field effect transistor (TFET) for asymmetric doping at source and drain regions is proposed. The gate consists of three segment different workfunctions ϕ ₁, ϕ ₂, and ϕ ₃, which are named as tunnelling gate (M ₁), control gate (M ₂), and auxiliary gate (M ₃), respectively. Forward to this, three possible combinations of ϕ ₁, ϕ ₂ and ϕ ₃ to maintain the dual workfunctionality of the device (ϕ ₂ = ϕ ₃ > ϕ ₁, ϕ ₁ = ϕ ₂ > ϕ ₃, ϕ ₁ = ϕ ₃ < ϕ ₂) were considered. Further, the comparison of these possible combinations are performed with conventional TFET (ϕ ₁ = ϕ ₂ = ϕ ₃). Among these ϕ ₁ = ϕ ₃ < ϕ ₂, generates most optimum results in terms of suppression of ambipolar behaviour, and enhancement in ON state current (I _ON) of the device. The proposed device shows significant improvement in terms of I _ON (1.66 × 10⁻⁵ A/μm for SiO ₂), I _ON/I _OFF (7.22 × 10¹¹), and sub-threshold swing (∼19 mV/decade) as compared with conventional and the dual material TFET devices. Further, the analysis of analogue/RF performance is performed for the devices showing optimum performance in terms of suppression of ambipolar behaviour.

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