Resistive-switching and current-conduction mechanisms in F8BT polymer resistive switch
- Author(s): Muhammad N. Awais 1 ; Maria Mustafa 2 ; Muhammad N. Shehzad 1 ; Umer Farooq 1 ; Mirza T. Hamayun 1 ; Kyung H. Choi 3
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Volume 11, Issue 11,
November 2016,
p.
712 – 714
DOI: 10.1049/mnl.2016.0165 , Online ISSN 1750-0443
Poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT) polymer has been investigated to elucidate the resistive-switching properties in a sandwiched structure of indium tin oxide (ITO)/F8BT/aluminium (Al). An active layer of F8BT polymer was deposited on the ITO-coated polyethylene terepthalate through spin coating. Morphologically, the layer was characterised with field emission scanning electron microscope. The fabricated sample showed resistive-switching properties within ±5 V with an OFF/ON ratio of 10:1. The switching characteristics were attributed to the transition of trap-limited space charge-limited conduction (SCLC) to trap-filled SCLC. It is shown through energy band diagram that memory effects in the fabricated sample were due to the trapping of electrons in the F8BT active layer that were injected from the top Al electrode.
Inspec keywords: field emission electron microscopes; aluminium; tin compounds; spin coating; scanning electron microscopes; indium compounds; semiconductor switches; polymers
Other keywords: F8BT polymer resistive switch; resistive-switching properties; spin coating; poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)]; indium tin oxide; field emission scanning electron microscope; switching characteristics; memory effects; SCLC; F8BT active layer; resistive-switching mechanisms; aluminium; ITO; polyethylene terepthalate; current-conduction mechanisms; voltage 5 V; Al; space charge-limited conduction; energy band diagram
Subjects: Other thin film deposition techniques; Semiconductor devices; Relays and switches; Polymers and plastics (engineering materials science)
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