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Carrier mobility extraction method in ChGs in the UV light exposure

Carrier mobility extraction method in ChGs in the UV light exposure

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One of the significant advantages of the ultraviolet (UV) light exposure of chalcogenide glasses (ChGs), photodoping process, is in the application of programmable metallisation cells (PMCs) as a novel non-volatile resistive memory. The memory state of a PMC is dictated by the formation or dissolution of a metallic filament in a ChG film between active metal and inert metal contacts. Owing to relatively rigid covalent bonds mixed with soft van der Waals interconnections, ChGs are able to form acceptor-like traps where electrons are absorbed, and therefore electron mobility decreases compared with crystallised structures. The role of electrons in the interaction with ionic species in ChGs is inevitable. One the other hand, holes are considered as majority carries and their role in interaction with the system is also significant. Therefore, knowing carrier mobility in ChGs is essential. To extract carrier mobilities, for the first time a circuit setup accompanying with time constant extraction method for Ge30Se70 as a ChG material without and with UV light exposure is proposed. Owing to being straightforward, this method can be applied to other ChG materials as well as other light sources or even ionising radiation particles.

Inspec keywords: ultraviolet radiation effects; electron traps; resistive RAM; semiconductor device metallisation; semiconductor doping; hole mobility; hole traps; van der Waals forces; germanium compounds; electron mobility; dissolving; semiconductor thin films; chalcogenide glasses; metal-semiconductor-metal structures; bonds (chemical); integrated circuit interconnections

Other keywords: carrier mobility extraction; programmable metallisation cells; nonvolatile resistive memory; chalcogenide glass film; metallic filament dissolution; soft van der Waals interconnections; ultraviolet light exposure; crystallised structures; covalent bonds; acceptor-like traps; Ge30Se70; electron mobility; time constant extraction method; ionising radiation particles; inert metal contacts; photodoping; active metal

Subjects: Solubility, segregation, and mixing; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Metal-insulator-metal and metal-semiconductor-metal structures; Semiconductor doping; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Ultraviolet, visible and infrared radiation effects; Electrical properties of amorphous and glassy semiconductors (thin films/low-dimensional structures); Memory circuits; Radiation effects (semiconductor technology); Metallisation and interconnection technology; Doping and implantation of impurities; Amorphous and glassy semiconductors; Electrical properties of metal-semiconductor-metal structures

References

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      • 3. Saremi, M., Rajabi, S., Barnaby, H.J., et al: ‘The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC)’. MRS Proc., 2014, vol. 1692.
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      • 9. Silvaco: ATLAS simulator fromSilvaco Inc., Version 5.19.20.R, 2013.
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