access icon free Prospects of Zn(O,S) as an alternative buffer layer for Cu2ZnSnS4 thin-film solar cells from numerical simulation

Zn(O,S) is an attractive alternative to CdS as a buffer layer of Cu2ZnSnS4 (CZTS)-based solar cell due to its higher bandgap and environmental friendliness. In this work, CZTS solar cell with a structure of CZTS/Zn(O,S)/Al:ZnO was simulated by Solar Cell Capacitance Simulator (SCAPS). The impacts of thickness and acceptor concentration of CZTS, thickness and donor concentration of Zn(O,S) and operating temperature on the performance of CZTS solar cells were investigated. It has been obtained that the optimum thickness of CZTS is between 2000 and 3000 nm and that of Zn(O,S) is about 50 nm. The suitable doping concentrations of CZTS and Zn(O,S) layers are around 1016 and 1017 cm−3, respectively. The temperature coefficient of efficiency is about −0.023 %/K in the CZTS solar cell. All these simulation results will provide some important guidelines for fabricating high efficient CZTS solar cells.

Inspec keywords: capacitance; aluminium; wide band gap semiconductors; thin film devices; copper compounds; tin compounds; doping profiles; II-VI semiconductors; solar cells; semiconductor thin films; buffer layers; zinc compounds

Other keywords: Cu2ZnSnS4-Zn(OS)-ZnO:Al; buffer layer; solar cell capacitance simulator; numerical simulation; temperature coefhcient of efhciency; thin-film solar cells; donor concentration; doping concentration; acceptor concentration

Subjects: Solar cells and arrays; Photoelectric conversion; solar cells and arrays; Semiconductor doping

http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2016.0130
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