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High frequency performance of dual metal gate vertical tunnel field effect transistor based on work function engineering

High frequency performance of dual metal gate vertical tunnel field effect transistor based on work function engineering

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A novel dual metal gate doping-less vertical tunnel field effect transistor (D-VTFET) on silicon body, using work function engineering is proposed. The proposed structure does not required impurity doping for formation of the drain and the source regions. In this concern, source and drain regions are formed by selecting appropriate work-function of metal electrode. The source and drain regions are not formed by conventional ways of ion implantation or diffusion. Hence, proposed structure is immune greatly to the process variation, issues of doping control and random dopant fluctuations which are serious problems in ultrathin silicon devices. For further improvement in ON state current and analogue/RF figures of merit dual work function of single gate material is considered. The electrical characteristics of the proposed device with the D-VTFET are simulated and compared.

http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2015.0526
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