access icon free Asymmetric lightly doped Schottky barrier CNTFET

For the first time, an asymmetric lightly doped Schottky barrier carbon nanotube field effect transistor (SB_CNTFETs) is proposed and simulated using quantum simulations. Comparisons are made among four SB_CNTFETs structures for electrical characteristics. One is the conventional SB_CNTFET with an intrinsic channel. The other proposed and studied designations are an asymmetrically doped SB_CNTFET with a doped region near the source only, a symmetrically doped source and drain SB_CNTFETand an asymmetric lightly doped SB_CNTFET which shows the ultimate performance among all. The results show that the new asymmetric lightly doped design decreases significantly the leakage current and thus increases on/off ratio as well as cutoff frequency. It is also demonstrated that this structure possesses two perceivable steps in potential profile of the channel, which lead to another lateral electric field peak inside the channel which leads to the immunity against short-channel effects. The cutoff frequency characteristics of the four structures of SB_CNTFETs have been discussed. Results show that for channel lengths >30 nm cutoff frequency of the asymmetric lightly doped SB_CNTFETis greater than others. The effect of different doped region lengths in a 30 nm SB_CNTFET has been discussed as well. The proposed new design is promising from several points of view discussed in the study.

Inspec keywords: semiconductor doping; leakage currents; Schottky barriers; carbon nanotube field effect transistors

Other keywords: electrical characteristics; asymmetric lightly doped design; symmetrically doped source; symmetrically doped source SB_CNTFET; asymmetric lightly doped Schottky barrier carbon nanotube field effect transistor; quantum simulations; intrinsic channel; SB_CNTFETs structures; short-channel effects; channel lengths; leakage current; cutoff frequency characteristics; size 30 nm; lateral electric field; drain SB_CNTFET

Subjects: Other field effect devices; Semiconductor doping; Fullerene, nanotube and related devices

http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2015.0434
Loading

Related content

content/journals/10.1049/mnl.2015.0434
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading