access icon free Ternary static random access memory using quantum dot gate field-effect transistor

Quantum dot gate field-effect transistor (QDGFET) generates three states in their transfer characteristics. A successful model can explain the generation of third state in the transfer characteristics of the QDGFET. The innovative circuit design using QDGFET can be used to design different ternary logic. This Letter discusses the design of ternary logic static random access memory using QDGFET.

Inspec keywords: integrated circuit design; field effect transistors; ternary logic; quantum dots; random-access storage

Other keywords: QDGFET; circuit design; ternary logic; quantum dot gate field-effect transistor; random access memory

Subjects: Other field effect devices; Semiconductor storage; Semiconductor integrated circuit design, layout, modelling and testing; Memory circuits

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2015.0200
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