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Ternary static random access memory using quantum dot gate field-effect transistor

Ternary static random access memory using quantum dot gate field-effect transistor

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Quantum dot gate field-effect transistor (QDGFET) generates three states in their transfer characteristics. A successful model can explain the generation of third state in the transfer characteristics of the QDGFET. The innovative circuit design using QDGFET can be used to design different ternary logic. This Letter discusses the design of ternary logic static random access memory using QDGFET.


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