access icon free Silicon anisotropic etching in Triton-mixed and isopropyl alcohol-mixed tetramethyl ammonium hydroxide solution

The anisotropic silicon (Si) etching characteristics of Si (100) in 25 wt.% tetramethyl ammonium hydroxide (TMAH) solutions containing Triton X-100 and isopropyl alcohol (IPA) were studied. The etch rate, convex corners and roughness of the etched surface were investigated. In this reported work two central goals, a mirror-like surface finish and a high reduction of undercutting, have been achieved. The best etched result was obtained in 25 wt.% TMAH + 0.25%v/v Triton + 16%v/v IPA, which has minimum convex corner undercutting and a smooth etched surface (Ra = 1 nm). This study is useful for engineering applications where the fabrication of microstructures for high-quality devices should simultaneously contain smooth surfaces on a large area and less convex corner undercutting.

Inspec keywords: surface roughness; surface finishing; silicon; elemental semiconductors; etching

Other keywords: convex corners; Triton X-100; mirror-like surface finish; etch rate; etched surface roughness; microstructure fabrication; silicon anisotropic etching; triton-mixed tetramethyl ammonium hydroxide solution; isopropyl alcohol-mixed tetramethyl ammonium hydroxide solution; Si

Subjects: Solid surface structure; Surface treatment and degradation in semiconductor technology; Surface treatment (semiconductor technology); Elemental semiconductors

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2015.0104
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