Titanium oxide vertical resistive random-access memory device

David M. Fryauf; Kate J. Norris; Junce Zhang; Shih-Yuan Wang; Nobuhiko P. Kobayashi

Titanium oxide vertical resistive random-access memory device

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Author(s): David M. Fryauf ^{1, 2} ; Kate J. Norris ^{1, 2} ; Junce Zhang ^{1, 2} ; Shih-Yuan Wang ^{1, 2} ; Nobuhiko P. Kobayashi ^{1, 2}
- Affiliations: 1: Electrical Engineering Department, University of California, Santa Cruz, CA 95064, USA;
  2: Nanostructured Energy Conversion Technology and Research (NECTAR) group at the Advanced Studies Laboratory, UC Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035, USA
Source: Volume 10, Issue 7, July 2015, p. 321 – 323
DOI: 10.1049/mnl.2015.0021 , Online ISSN 1750-0443

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Received 16/01/2015, Accepted 26/03/2015, Published 11/06/2015

Pt/TiO₂/Pt vertical resistive random-access memory switching devices were fabricated in a vertical three-dimensional structure by combining conventional photolithography, electron-beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross-sectional area was ∼0.02 µm², which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross-sectional scanning, transmission electron microscopy and current–voltage characteristics.

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