Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

Hao Cui; Si-Hyun Park

Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

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Author(s): Hao Cui ¹ and Si-Hyun Park ¹
- Affiliations: 1: Department of Electronic Engineering, Yeungnam University, Gyeongsan 712-749, Republic of Korea
Source: Volume 9, Issue 12, December 2014, p. 841 – 844
DOI: 10.1049/mnl.2014.0373 , Online ISSN 1750-0443

Received 27/06/2014, Accepted 19/08/2014, Revised 14/08/2014, Published 17/09/2014

Numerical simulations are performed to investigate the light-extraction efficiencies (LEEs) of gallium nitride-based light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs), using the three-dimensional finite-difference time-domain method. PSSs with hexagonal arrays of cone-shaped patterns were used, and the pitch of the pattern array, pattern fill factor and pattern height were varied from nanoscale to microscale. The relative LEE for each PSS-LED was calculated, and the geometrical parameters were analysed for optimised light extraction enhancement of the PSS-LEDs.

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Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

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