Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted-annealed copper
- Author(s): Anousheh Kazemeini-Asl 1 ; Majdid M. Larijani 2 ; Vahid Fathollahi 3
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View affiliations
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Affiliations:
1:
Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran;
2: Nuclear Science and Technology Research Institute (NSTRI), P.O. Box 31485-498, Karaj, Iran;
3: Nuclear Science Research School, NSTRI, P.O. Box 14395-836, Tehran, Iran
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Affiliations:
1:
Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran;
- Source:
Volume 9, Issue 12,
December 2014,
p.
917 – 921
DOI: 10.1049/mnl.2014.0287 , Online ISSN 1750-0443
Cu thin films sputter-coated on single crystals of silicon were implanted with 30 keV nitrogen ions under various doses from 1.9 × 1017 to 5.7 × 1017 ions/cm2. The prepared samples were subsequently annealed in nitrogen atmosphere. The grazing incidence X-ray diffraction analysis revealed that in addition to the crystalline copper nitride phase, copper azides were developed by nitrogen ion implantation. With an increase of the implantation dose to 2.3 × 1018 ions/cm2, much of the Cu film was transformed to the crystalline Cu3N phase. Furthermore, the effect of nitrogen ion implantation on Cu thin films under various doses was investigated. The structural properties, morphology and sheet resistance of samples were investigated by grazing incidence X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy and four-point probe techniques, respectively. In addition, the dependence of resistivity of the implanted samples on the implantation dose as well as structural properties is discussed.
Inspec keywords: metallic thin films; sputter deposition; atomic force microscopy; nanostructured materials; electrical resistivity; scanning electron microscopy; doping profiles; solid-state phase transformations; copper; nitrogen; X-ray diffraction; annealing; ion implantation; field emission electron microscopy
Other keywords: crystalline copper nitride phase; nitrogen ion implantation; nitrogen implanted-annealed copper; sheet resistance; structural properties; electrical resistivity; four-point probe techniques; thin films; Cu:N; nitrogen atmosphere; sputter coating; copper azides; grazing incidence X-ray diffraction; field emission scanning electron microscopy; ion dose; electron volt energy 30 keV; Si; nanostructure morphology; atomic force microscopy; single silicon crystals
Subjects: Impurity concentration, distribution, and gradients; Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder; Doping and implantation of impurities; Other heat and thermomechanical treatments; Electrical properties of metals and metallic alloys (thin films, low-dimensional and nanoscale structures); Solid-solid transitions; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Thin film growth, structure, and epitaxy; Deposition by sputtering
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