access icon free Radial photovoltaic junction with single Si nanowire core–shell structure

A single silicon nanowire core–shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.

Inspec keywords: core-shell nanostructures; silicon; nanowires; scanning electron microscopy; elemental semiconductors; semiconductor junctions; solar cells

Other keywords: scanning electron microscopy; P-i-N radial junction; Si; electrical characterisation; SEM; radial photovoltaic junction; N-type doped silicon layer; intrinsic thin silicon layer; single silicon nanowire core-shell structure; P-type silicon nanowire

Subjects: Nanometre-scale semiconductor fabrication technology; Solar cells and arrays; Photoelectric conversion; solar cells and arrays

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2014.0138
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