Radial photovoltaic junction with single Si nanowire core–shell structure
- Author(s): Ludovic Dupré 1 ; Denis Buttard 1, 2 ; A. Solanki 1 ; Nicolas Pauc 1 ; Pascal Gentile 1
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View affiliations
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Affiliations:
1:
Institut Nanosciences et Cryogénie, CEA-Grenoble, 17 Avenue des Martyrs, Grenoble 38054, France;
2: Institut Universitaire de Technologie 1, Université de Grenoble Alpes, 17 Quai Claude Bernard, Grenoble 38000, France
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Affiliations:
1:
Institut Nanosciences et Cryogénie, CEA-Grenoble, 17 Avenue des Martyrs, Grenoble 38054, France;
- Source:
Volume 10, Issue 1,
January 2015,
p.
37 – 39
DOI: 10.1049/mnl.2014.0138 , Online ISSN 1750-0443
A single silicon nanowire core–shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.
Inspec keywords: core-shell nanostructures; silicon; nanowires; scanning electron microscopy; elemental semiconductors; semiconductor junctions; solar cells
Other keywords: scanning electron microscopy; P-i-N radial junction; Si; electrical characterisation; SEM; radial photovoltaic junction; N-type doped silicon layer; intrinsic thin silicon layer; single silicon nanowire core-shell structure; P-type silicon nanowire
Subjects: Nanometre-scale semiconductor fabrication technology; Solar cells and arrays; Photoelectric conversion; solar cells and arrays
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