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access icon free Type of distortionless through silicon via design based on the multiwalled carbon nanotube

© The Institution of Engineering and Technology
Received 22/10/2013, Accepted 22/11/2013, Published

The concept of a distortionless through silicon via (TSV), which uses a multiwalled carbon nanotube (MWCNT) as conductor material, is proposed. The design requirements and the design method for the distortionless TSV are presented. In the high-frequency band, the propagation constant of the traditional Cu-TSV will deviate from the linear function of the frequency because of the skin effect, inducing the transmission signal distortion. MWCNT bundles have properties where the resistance and the inductance are almost constant with the frequency, which can meet the design requirements for a distortionless TSV. Compared with the identical dimensions Cu-TSV, the TSV designed by using the proposed method with MWCNT bundles as the conductor material has the preferable linearity of the propagation constant with the frequency in the high-frequency band, so that it can reduce the distortion of the transmission signal.

Inspec keywords: integrated circuit design; three-dimensional integrated circuits; inductance; carbon nanotubes; skin effect; electric resistance; conducting materials; distortion

Other keywords: skin effect; Cu-TSV; conductor material; C; inductance; resistance; multiwalled carbon nanotube; high-frequency band; distortionless through silicon via design; transmission signal distortion; propagation constant

Subjects: Conductors; Semiconductor integrated circuit design, layout, modelling and testing

References

    1. 1)
      • 8. Naeemi, A., Meindl, J.D.: ‘Compact physical models for multiwall carbon-nanotube interconnects’, IEEE Electron Device Lett., 2006, 27, pp. 338–340 (doi: 10.1109/LED.2006.873765).
    2. 2)
      • 5. Zhao, W.S., Yin, W.Y., Guo, Y.X.: ‘Electromagnetic compatibility-oriented study on through silicon single-walled carbon nanotube bundle via (TS-SWCNTTB) arrays’, IEEE Trans. Electromagn. Compat., 2012, 54, pp. 149–157 (doi: 10.1109/TEMC.2011.2167336).
    3. 3)
      • 2. Cho, J., Song, E., Yoon, K., et al: ‘Modeling and analysis of through-silicon via (TSV) noise coupling and suppression using a guard ring’, IEEE Trans. Compon. Packag. Manuf. Technol., 2011, 1, pp. 220–233 (doi: 10.1109/TCPMT.2010.2101892).
    4. 4)
      • 3. Xu, Z., Lu, J.Q.: ‘Through-silicon-via parasitics and wideband modeling for three-dimensional integration/packaging’, IEEE Electron Device Lett., 2011, 32, pp. 1278–1280 (doi: 10.1109/LED.2011.2158511).
    5. 5)
      • 1. Xu, Z., Lu, J.Q.: ‘Through-silicon-via fabrication technologies, passives extraction, and electrical modeling for 3-D integration/packaging’, IEEE Trans. Semicond. Manuf., 2013, 26, pp. 23–34 (doi: 10.1109/TSM.2012.2236369).
    6. 6)
      • 3. Xu, Z., Lu, J.Q.: ‘Through-silicon-via parasitics and wideband modeling for three-dimensional integration/packaging’, IEEE Electron Device Lett., 2011, 32, pp. 1278–1280 (doi: 10.1109/LED.2011.2158511).
    7. 7)
      • 4. Li, H., Banerjee, K.: ‘High-frequency analysis of carbon nanotube interconnects and implications for on-chip inductor design’, IEEE Trans. Electron Devices, 2009, 56, pp. 2202–2214 (doi: 10.1109/TED.2009.2028395).
    8. 8)
      • 1. Xu, Z., Lu, J.Q.: ‘Through-silicon-via fabrication technologies, passives extraction, and electrical modeling for 3-D integration/packaging’, IEEE Trans. Semicond. Manuf., 2013, 26, pp. 23–34 (doi: 10.1109/TSM.2012.2236369).
    9. 9)
      • 2. Cho, J., Song, E., Yoon, K., et al: ‘Modeling and analysis of through-silicon via (TSV) noise coupling and suppression using a guard ring’, IEEE Trans. Compon. Packag. Manuf. Technol., 2011, 1, pp. 220–233 (doi: 10.1109/TCPMT.2010.2101892).
    10. 10)
      • 7. Li, H., Yin, W.Y., Banerjee, K., Mao, J.F.: ‘Circuit modeling and performance analysis of multi-walled carbon nanotube interconnects’, IEEE Trans. Electron Devices, 2008, 55, pp. 1328–1337 (doi: 10.1109/TED.2008.922855).
    11. 11)
      • 5. Zhao, W.S., Yin, W.Y., Guo, Y.X.: ‘Electromagnetic compatibility-oriented study on through silicon single-walled carbon nanotube bundle via (TS-SWCNTTB) arrays’, IEEE Trans. Electromagn. Compat., 2012, 54, pp. 149–157 (doi: 10.1109/TEMC.2011.2167336).
    12. 12)
      • 8. Naeemi, A., Meindl, J.D.: ‘Compact physical models for multiwall carbon-nanotube interconnects’, IEEE Electron Device Lett., 2006, 27, pp. 338–340 (doi: 10.1109/LED.2006.873765).
    13. 13)
      • 6. Xu, C., Li, H., Suaya, R., Banerjee, K.: ‘Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs’, IEEE Trans. Electron Devices, 2010, 57, pp. 3405–3417 (doi: 10.1109/TED.2010.2076382).
    14. 14)
      • 9. http://www.ansys.com/Products/SimulationTechnology/Electro-magnetics/SignalIntegrity&PowerIntegrity/ANSYSQ3DExtractor.
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