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access icon free Ternary semiconductor ZnSe0.7Te0.3 nanowires

© The Institution of Engineering and Technology
Received 13/05/2013, Accepted 24/06/2013, Revised 15/06/2013, Published

Ternary semiconductor ZnSe0.7Te0.3 nanowires (NWs) are synthesised by using a thermal evaporation method, and the as-synthesised NWs have a wurtzite structure with a growth direction of [001]. The electrical measurements are carried out based on nano-field-effect transistors fabricated by individual NWs, and the electron transport characteristics reveal that the ZnSe0.7Te0.3 NWs have p-type conductivity with a high-mobility (μh ) of 0.9 cm2 V−1S−1 and carrier concentration (nh ) 5 × 1018 cm−3. Photoluminescence measurements for ZnSe0.7Te0.3 NWs show a dominant emission peaked at 478 nm which is the emission of free exciton.

Inspec keywords: zinc compounds; carrier density; vapour deposition; semiconductor growth; field effect transistors; nanowires; electrical conductivity; nanofabrication; excitons; photoluminescence; II-VI semiconductors; carrier mobility; wide band gap semiconductors

Other keywords: p-type conductivity; nanofield-effect transistors; mobility; electrical properties; carrier concentration; photoluminescence; wurtzite structure; electron transport; thermal evaporation; ZnSe0.7Te0.3; ternary semiconductor nanowires; free exciton

Subjects: Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Nanometre-scale semiconductor fabrication technology; Photoluminescence in II-VI and III-V semiconductors; Methods of nanofabrication and processing; Ion plating and other vapour deposition; II-VI and III-V semiconductors; Low-dimensional structures: growth, structure and nonelectronic properties; Semiconductor superlattices, quantum wells and related structures; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Other field effect devices; Other thin film deposition techniques; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Electron states in low-dimensional structures; Thin film growth, structure, and epitaxy

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