Al-doped ZnS thin films for buffer layers of solar cells prepared by chemical bath deposition
- Author(s): Jie Liao 1, 2 ; Shuying Cheng 1, 2 ; Haifang Zhou 2 ; Bo Long 2
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Affiliations:
1:
State Key Laboratory Breeding Base of Photocatalysis, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China;
2: Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
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Affiliations:
1:
State Key Laboratory Breeding Base of Photocatalysis, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China;
- Source:
Volume 8, Issue 4,
April 2013,
p.
211 – 214
DOI: 10.1049/mnl.2013.0039 , Online ISSN 1750-0443
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In this reported study, Al-doped ZnS (ZnS:Al) thin films were fabricated by chemical bath deposition in alkaline condition along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride buffer solution. Al concentrations were varied from 0 to 10 at.%. The structure and composition of the films were confirmed by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectra and Raman spectroscopy. The XRD, FTIR and Raman spectra confirmed the existence of ZnS and Al–S bond, which had some effects on the properties of the films. The optical characteristics indicated the changes of the bandgap with the Al-doping concentrations. The resistivity of the ZnS:Al films with different Al-doping concentrations after annealing was analysed and the sample with 6 at.% Al concentration had the lowest resistivity of 9.9 × 104 Ω cm.
Inspec keywords: semiconductor thin films; buffer layers; aluminium; wide band gap semiconductors; Raman spectra; II-VI semiconductors; electrical resistivity; annealing; liquid phase deposition; energy gap; semiconductor growth; doping profiles; X-ray diffraction; Fourier transform spectra; zinc compounds; infrared spectra
Other keywords: thin film composition; ammonia-ammonium chloride buffer solution; XRD; bandgap; stable complexing agent; chemical bath deposition; thin film structure; X-ray diffraction; solar cells; buffer layers; electrical resistivity; sodium citrate; annealing; optical characteristics; ZnS:Al; Raman spectroscopy; Fourier transform infrared spectra; doping concentration; alkaline condition; FTIR spectra
Subjects: Deposition from liquid phases (melts and solutions); Infrared and Raman spectra in inorganic crystals; Annealing processes; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Thin film growth, structure, and epitaxy; Annealing processes in semiconductor technology; Impurity concentration, distribution, and gradients; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor doping; Deposition from liquid phases; II-VI and III-V semiconductors; Electronic structure of crystalline semiconductor compounds and insulators
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