UV nanoimprint lithography of 70 nm half pitch line pattern using plant-based resist material with lactulose derivative derived from biomass and medicinal drugs

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UV nanoimprint lithography of 70 nm half pitch line pattern using plant-based resist material with lactulose derivative derived from biomass and medicinal drugs

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© The Institution of Engineering and Technology
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Plant-based resist materials have great potential for environmentally compatible bio-nanofabrication and have recently been applied as UV crosslinkable materials for nanoimprint lithography. This Letter reports an UV nanoimprint lithography using plant-based resist materials with lactulose derivative derived from biomass and medicinal drugs. Seventy nanometres half pitch line patterning was demonstrated in the specified UV nanoimprint conditions of etching multilayer processes using silicon-based middle layer and novolac-based bottom layer. Lower film thickness shrinkage of the newly developed lactulose derivative resist material than that of acrylate-based resist material was one of the keys to achieving high-resolution nanoimprint patterns.

Inspec keywords: elemental semiconductors; etching; nanolithography; photoresists; soft lithography; nanofabrication; multilayers; nanopatterning; silicon; ultraviolet lithography

Other keywords: UV crosslinkable materials; medicinal drugs; biomass; film thickness shrinkage; nanometre half pitch line patterning; novolac-based bottom layer; acrylate-based resist material; high-resolution nanoimprint patterns; plant-based resist material; silicon-based middle layer; lactulose derivative resist material; UV nanoimprint conditions; etching multilayer processes; UV nanoimprint lithography; Si; environmentally compatible bionanofabrication

Subjects: Surface treatment and degradation in semiconductor technology; Surface treatment (semiconductor technology); Nanolithography; Nanopatterning; Nanometre-scale semiconductor fabrication technology; Elemental semiconductors; Lithography (semiconductor technology)

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