Fabrication and property of titanium dioxide thin film using sol–gel method and CO2 laser annealing

Fabrication and property of titanium dioxide thin film using sol–gel method and CO2 laser annealing

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In this Letter, the sol–gel method and CO2 laser annealing are combined as an effective process for studying phase formation and the hydrophilic property of TiO2 thin film. X-ray diffraction patterns reveal that phase transformation can be controlled by sol–gel solution or laser power. ANSYS software was used to analyse the temperature field during laser treatment processing to confirm the phase transformation temperature of TiO2 for anatase at 350°C and rutile at 800°C. Contact angle is an index of hydrophilicity of films and related to laser power. As laser power increases from 0.5 to 3.0 W, the contact angle of the film decreased from 70° to 45° because of the enhanced hydrophilicity. The photoluminescence (PL) property of the laser annealed films was also studied to find wavelengths of 350–800 nm. The wide PL can be deconvoluted into different peaks that were attributed to the lattice emission, deep-level emissions from oxygen vacancies and defect states. This combined processing offers an easy way for the fabrication of hydrophilic and wide PL TiO2 with merits of larger area, selective treatment and low cost.

Inspec keywords: semiconductor materials; hydrophilicity; semiconductor thin films; photoluminescence; vacancies (crystal); titanium compounds; semiconductor growth; X-ray diffraction; defect states; deep levels; sol-gel processing; laser beam annealing; contact angle

Other keywords: titanium dioxide thin film fabrication; ANSYS software; selective treatment; phase transformation temperature; power 0.5 W to 3 W; effective process; sol-gel solution; sol-gel method; film contact angle; enhanced hydrophilicity; defect states; laser annealed films; carbon dioxide laser annealing; hydrophilic property; laser power; oxygen vacancies; XRD; wavelength 350 nm to 800 nm; laser treatment processing; X-ray diffraction patterns; titanium dioxide thin film property; TiO2; temperature field; photoluminescence property; lattice emission; hydrophilic titanium dioxide fabrication; wide photoluminescence titanium dioxide fabrication; film hydrophilicity index; deep-level emissions

Subjects: Fluid surface energy (surface tension, interface tension, angle of contact, etc.); Annealing processes; Impurity and defect levels in other nonmetals; Annealing processes in semiconductor technology; Optical properties of other inorganic semiconductors and insulators (thin films/low-dimensional structures); Laser materials processing; Deposition from liquid phases (melts and solutions); Photoluminescence in other inorganic materials; Interstitials and vacancies; Deposition from liquid phases; Thin film growth, structure, and epitaxy; Oxide and ferrite semiconductors


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